Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations
Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor...
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AMER INST PHYSICS
2008
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| Online Access: | http://shdl.mmu.edu.my/2766/ |
| _version_ | 1848790144020119552 |
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| author | Vainshtein, Sergey Yuferev, Valentin Palankovski, Vassil Ong, Duu-Sheng Kostamovaara, Juha |
| author_facet | Vainshtein, Sergey Yuferev, Valentin Palankovski, Vassil Ong, Duu-Sheng Kostamovaara, Juha |
| author_sort | Vainshtein, Sergey |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor structure, in which the switching transient is very sensitive to this dependence at high electric fields (up to 0.6 MV/cm). Such a comparison allows the conclusion to be made that the change from negative to positive differential mobility predicted earlier at E similar to 0.3 MV/cm should not happen until the electric field exceeds 0.6 MV/cm. (c) 2008 American Institute of Physics. |
| first_indexed | 2025-11-14T18:07:56Z |
| format | Article |
| id | mmu-2766 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:07:56Z |
| publishDate | 2008 |
| publisher | AMER INST PHYSICS |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-27662011-09-13T07:03:29Z http://shdl.mmu.edu.my/2766/ Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations Vainshtein, Sergey Yuferev, Valentin Palankovski, Vassil Ong, Duu-Sheng Kostamovaara, Juha T Technology (General) QC Physics Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor structure, in which the switching transient is very sensitive to this dependence at high electric fields (up to 0.6 MV/cm). Such a comparison allows the conclusion to be made that the change from negative to positive differential mobility predicted earlier at E similar to 0.3 MV/cm should not happen until the electric field exceeds 0.6 MV/cm. (c) 2008 American Institute of Physics. AMER INST PHYSICS 2008-02 Article NonPeerReviewed Vainshtein, Sergey and Yuferev, Valentin and Palankovski, Vassil and Ong, Duu-Sheng and Kostamovaara, Juha (2008) Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations. Applied Physics Letters, 92 (6). 062114. ISSN 00036951 http://dx.doi.org/10.1063/1.2870096 doi:10.1063/1.2870096 doi:10.1063/1.2870096 |
| spellingShingle | T Technology (General) QC Physics Vainshtein, Sergey Yuferev, Valentin Palankovski, Vassil Ong, Duu-Sheng Kostamovaara, Juha Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations |
| title | Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations |
| title_full | Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations |
| title_fullStr | Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations |
| title_full_unstemmed | Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations |
| title_short | Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations |
| title_sort | negative differential mobility in gaas at ultrahigh fields: comparison between an experiment and simulations |
| topic | T Technology (General) QC Physics |
| url | http://shdl.mmu.edu.my/2766/ http://shdl.mmu.edu.my/2766/ http://shdl.mmu.edu.my/2766/ |