Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations
Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor...
| Main Authors: | , , , , |
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| Format: | Article |
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AMER INST PHYSICS
2008
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2766/ |
| Summary: | Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor structure, in which the switching transient is very sensitive to this dependence at high electric fields (up to 0.6 MV/cm). Such a comparison allows the conclusion to be made that the change from negative to positive differential mobility predicted earlier at E similar to 0.3 MV/cm should not happen until the electric field exceeds 0.6 MV/cm. (c) 2008 American Institute of Physics. |
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