Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes

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Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes

A full-band Monte Carlo model is used to investigate the probability distribution functions of impact ionization path length and impact ionization energy for electrons and holes in GaAs. The simulations show that the soft ionization threshold energy in GaAs allows impact ionization to occur at energ...

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Bibliographic Details
Main Authors:	Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N.
Format:	Article
Published:	2000
Subjects:	QC Physics
Online Access:	http://shdl.mmu.edu.my/2712/

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