Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes
A full-band Monte Carlo model is used to investigate the probability distribution functions of impact ionization path length and impact ionization energy for electrons and holes in GaAs. The simulations show that the soft ionization threshold energy in GaAs allows impact ionization to occur at energ...
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| Format: | Article |
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2000
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| Online Access: | http://shdl.mmu.edu.my/2712/ |
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| author | Ong, D. S. Li, K. F. Plimmer, S. A. Rees, G. J. David, J. P. R. Robson, P. N. |
| author_facet | Ong, D. S. Li, K. F. Plimmer, S. A. Rees, G. J. David, J. P. R. Robson, P. N. |
| author_sort | Ong, D. S. |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | A full-band Monte Carlo model is used to investigate the probability distribution functions of impact ionization path length and impact ionization energy for electrons and holes in GaAs. The simulations show that the soft ionization threshold energy in GaAs allows impact ionization to occur at energies much higher than the band gap. As a result, secondary carriers have a shorter dead space than newly injected carriers. The ionization path length distributions narrow at higher fields, producing a more deterministic impact ionization process in thin devices. The model is also used to simulate avalanche multiplication and noise in submicron homojunction GaAs p(+)-i-n(+) diodes. The predicted mean multiplication, < M > and excess noise factor, F are in quantitative agreement with the experimental results, in which F decreases as the length of multiplication region is reduced. (C) 2000 American Institute of Physics. [S0021- 8979(00)08211-6]. |
| first_indexed | 2025-11-14T18:07:43Z |
| format | Article |
| id | mmu-2712 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:07:43Z |
| publishDate | 2000 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-27122011-09-09T02:41:34Z http://shdl.mmu.edu.my/2712/ Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes Ong, D. S. Li, K. F. Plimmer, S. A. Rees, G. J. David, J. P. R. Robson, P. N. QC Physics A full-band Monte Carlo model is used to investigate the probability distribution functions of impact ionization path length and impact ionization energy for electrons and holes in GaAs. The simulations show that the soft ionization threshold energy in GaAs allows impact ionization to occur at energies much higher than the band gap. As a result, secondary carriers have a shorter dead space than newly injected carriers. The ionization path length distributions narrow at higher fields, producing a more deterministic impact ionization process in thin devices. The model is also used to simulate avalanche multiplication and noise in submicron homojunction GaAs p(+)-i-n(+) diodes. The predicted mean multiplication, < M > and excess noise factor, F are in quantitative agreement with the experimental results, in which F decreases as the length of multiplication region is reduced. (C) 2000 American Institute of Physics. [S0021- 8979(00)08211-6]. 2000-06 Article NonPeerReviewed Ong, D. S. and Li, K. F. and Plimmer, S. A. and Rees, G. J. and David, J. P. R. and Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes. Journal of Applied Physics, 87 (11). pp. 7885-7891. ISSN 00218979 http://dx.doi.org/10.1063/1.373472 doi:10.1063/1.373472 doi:10.1063/1.373472 |
| spellingShingle | QC Physics Ong, D. S. Li, K. F. Plimmer, S. A. Rees, G. J. David, J. P. R. Robson, P. N. Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes |
| title | Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes |
| title_full | Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes |
| title_fullStr | Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes |
| title_full_unstemmed | Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes |
| title_short | Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes |
| title_sort | full band monte carlo modeling of impact ionization, avalanche multiplication, and noise in submicron gaas p[sup +]-i-n[sup +] diodes |
| topic | QC Physics |
| url | http://shdl.mmu.edu.my/2712/ http://shdl.mmu.edu.my/2712/ http://shdl.mmu.edu.my/2712/ |