Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET

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Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET

An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An expression for channel length m...

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Bibliographic Details
Main Authors:	Kumar,, A, Gupta, , RS, Haldar,, S, Bindra, , S, Singh,, A, Bose,, S, Kalra,, E
Format:	Article
Published:	2001
Subjects:	QC Physics
Online Access:	http://shdl.mmu.edu.my/2679/

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