Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET
An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An expression for channel length m...
| Main Authors: | , , , , , , |
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| Format: | Article |
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2001
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| Online Access: | http://shdl.mmu.edu.my/2679/ |
| _version_ | 1848790121347809280 |
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| author | Kumar,, A Gupta, , RS Haldar,, S Bindra, , S Singh,, A Bose,, S Kalra,, E |
| author_facet | Kumar,, A Gupta, , RS Haldar,, S Bindra, , S Singh,, A Bose,, S Kalra,, E |
| author_sort | Kumar,, A |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An expression for channel length modulation factor is also developed and the substrate current is calculated. |
| first_indexed | 2025-11-14T18:07:35Z |
| format | Article |
| id | mmu-2679 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:07:35Z |
| publishDate | 2001 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-26792011-09-09T03:22:20Z http://shdl.mmu.edu.my/2679/ Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET Kumar,, A Gupta, , RS Haldar,, S Bindra, , S Singh,, A Bose,, S Kalra,, E QC Physics An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An expression for channel length modulation factor is also developed and the substrate current is calculated. 2001-11 Article NonPeerReviewed Kumar,, A and Gupta, , RS and Haldar,, S and Bindra, , S and Singh,, A and Bose,, S and Kalra,, E (2001) Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET. INDIAN JOURNAL OF PURE & APPLIED PHYSICS , 39 (11). pp. 731-737. ISSN 0019-5596 |
| spellingShingle | QC Physics Kumar,, A Gupta, , RS Haldar,, S Bindra, , S Singh,, A Bose,, S Kalra,, E Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET |
| title | Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET |
| title_full | Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET |
| title_fullStr | Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET |
| title_full_unstemmed | Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET |
| title_short | Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET |
| title_sort | analytical model for saturation drain current and substrate current of fully overlapped ldd mosfet |
| topic | QC Physics |
| url | http://shdl.mmu.edu.my/2679/ |