Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors

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Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors

The dead space effect under near-breakdown conditions in GaInP/GaAs composite collector double heterojunction bipolar transistor (DHBT) is investigated analytically. Using the dead space corrected model, the breakdown voltage is found to decrease with GaAs spacer thickness as reported from experimen...

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Bibliographic Details
Main Authors:	GOH, Y, ONG, D
Format:	Article
Published:	2004
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://shdl.mmu.edu.my/2464/

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