GOH, Y., & ONG, D. (2004). Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors.
Chicago Style (17th ed.) CitationGOH, Y., and D. ONG. Analytical Investigation of Dead Space Effect Under Near-breakdown Conditions in GaInP/GaAs Composite Double Heterojunction Bipolar Transistors. 2004.
MLA (9th ed.) CitationGOH, Y., and D. ONG. Analytical Investigation of Dead Space Effect Under Near-breakdown Conditions in GaInP/GaAs Composite Double Heterojunction Bipolar Transistors. 2004.
Warning: These citations may not always be 100% accurate.