The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs

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The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs

An analytical-band Monte Carlo model incorporating four non-parabolic spherical valleys to represent the first two conduction bands has been developed to model hot electron transport and impact ionization in GaAs. We have tested the performance of this simple model against full-band Monte Carlo simu...

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Bibliographic Details
Main Authors:	Choo, K Y, Ong, D S
Format:	Article
Published:	2004
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://shdl.mmu.edu.my/2457/

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