Full-band Monte Carlo simulation of thin InP p?i?n diodes

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Full-band Monte Carlo simulation of thin InP p?i?n diodes

A full-band Monte Carlo (FBMC) model is developed to simulate the avalanche characteristics of thin InP p(+)-i-n(+) diode. The realistic energy band structure of InP used in this model is generated from the local empirical pseudopotential method. The electron and hole ionisation coefficients are fit...

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Bibliographic Details
Main Authors:	YOU, A, ONG, D
Format:	Article
Language:	English
Published:	2005
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://shdl.mmu.edu.my/2304/ http://shdl.mmu.edu.my/2304/1/1578.pdf

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