Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices
High spped performance in VLSI devices requires the use of semiconductor materials such as copper interconnects and low-k dielectric. Low-k dielectric can reduce the parasitic capacitance between two metal lines, which allows higher operational speed as compared to silicon oxide.
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| Format: | Thesis |
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2006
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| Online Access: | http://shdl.mmu.edu.my/1124/ |
| Summary: | High spped performance in VLSI devices requires the use of semiconductor materials such as copper interconnects and low-k dielectric. Low-k dielectric can reduce the parasitic capacitance between two metal lines, which allows higher operational speed as compared to silicon oxide. |
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