Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors

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Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors

Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect.

Bibliographic Details
Main Author:	Lock, Choon Hou
Format:	Thesis
Published:	2006
Subjects:	TK7800-8360 Electronics
Online Access:	http://shdl.mmu.edu.my/1113/

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