Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect.
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| Format: | Thesis |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/1113/ |
| _version_ | 1848789696654606336 |
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| author | Lock, Choon Hou |
| author_facet | Lock, Choon Hou |
| author_sort | Lock, Choon Hou |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect. |
| first_indexed | 2025-11-14T18:00:50Z |
| format | Thesis |
| id | mmu-1113 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:00:50Z |
| publishDate | 2006 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-11132010-08-23T03:55:35Z http://shdl.mmu.edu.my/1113/ Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors Lock, Choon Hou TK7800-8360 Electronics Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect. 2006 Thesis NonPeerReviewed Lock, Choon Hou (2006) Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors. Masters thesis, Multimedia University. http://myto.perpun.net.my/metoalogin/logina.php |
| spellingShingle | TK7800-8360 Electronics Lock, Choon Hou Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors |
| title | Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors |
| title_full | Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors |
| title_fullStr | Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors |
| title_full_unstemmed | Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors |
| title_short | Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors |
| title_sort | applicability of analytical model for modeling silicon and silicon carbide mos transistors |
| topic | TK7800-8360 Electronics |
| url | http://shdl.mmu.edu.my/1113/ http://shdl.mmu.edu.my/1113/ |