Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect.
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| Format: | Thesis |
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2006
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| Online Access: | http://shdl.mmu.edu.my/1113/ |
| Summary: | Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect. |
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