Surface Photo Voltage Measurement Of Ultra-Violet Irradiation Effects In Oxidized Silicon Wafers

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Surface Photo Voltage Measurement Of Ultra-Violet Irradiation Effects In Oxidized Silicon Wafers

The effect of cumulative ultraviolet (UV, 4.9eV) irradiation on the p-type silicon wafers, with thermal oxide between 3.3-20.0 nm, was investigated by using the surface photo voltage (SPV) technique. All the experiments were carried out in the silicon processing plant, Shin-Etsu Handotai (M) Sdn Bhd...

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Bibliographic Details
Main Author:	Kang, Ban Hong
Format:	Thesis
Published:	2006
Subjects:	QC Physics
Online Access:	http://shdl.mmu.edu.my/1089/

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