Atomistic Study of the Bandgap Engineering of Two-Dimensional Silicon Carbide by Hydrogenation

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Atomistic Study of the Bandgap Engineering of Two-Dimensional Silicon Carbide by Hydrogenation

This work studied hydrogen adsorption by a two-dimensional silicon carbide using a combined molecular dynamics and density functional theory approach. The geometrical properties of partially and fully hydrogenated structures were investigated, considering the effect of zero-point energy. The preferr...

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Bibliographic Details
Main Authors:	Tran, Hanh Thi Thu, Nguyen, Phi Minh, Nguyen, Hoa Van, Chong, Tet Vui, Bubanja, Vladimir, Vo, Hoang Van
Format:	Article
Published:	ACS Publications 2023
Subjects:	QC Physics T Technology (General) TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.intimal.edu.my/1827/

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