Dark Current mechanisms in quantum dot laser structures
Current-voltage measurements have been performed on InAs/InGaAs/GaAs quantum dot structures with varying growth and design parameters. These measurements show that the forward and reverse bias dark currents decrease with increasing spacer growth temperature, however, they are relatively insensitive...
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| Format: | Article |
| Language: | English |
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American Institute of Physics
2011
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| Online Access: | http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/1/Dark_Current_Mechanism.pdf |
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| author | Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. |
| author_facet | Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. |
| author_sort | Hasbullah, Nurul Fadzlin |
| building | IIUM Repository |
| collection | Online Access |
| description | Current-voltage measurements have been performed on InAs/InGaAs/GaAs quantum dot structures with varying growth and design parameters. These measurements show that the forward and reverse bias dark currents decrease with increasing spacer growth temperature, however, they are relatively insensitive to the number of periods of the quantum dot layers. Temperature dependent current-voltage measurements show that the mechanism that governs the reverse bias leakage current is due to generation-recombination via mid-band traps assisted by the Frenkel-Poole emission of carriers from these traps. |
| first_indexed | 2025-11-14T14:41:36Z |
| format | Article |
| id | iium-9816 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T14:41:36Z |
| publishDate | 2011 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-98162012-05-24T14:27:50Z http://irep.iium.edu.my/9816/ Dark Current mechanisms in quantum dot laser structures Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. TK7885 Computer engineering Current-voltage measurements have been performed on InAs/InGaAs/GaAs quantum dot structures with varying growth and design parameters. These measurements show that the forward and reverse bias dark currents decrease with increasing spacer growth temperature, however, they are relatively insensitive to the number of periods of the quantum dot layers. Temperature dependent current-voltage measurements show that the mechanism that governs the reverse bias leakage current is due to generation-recombination via mid-band traps assisted by the Frenkel-Poole emission of carriers from these traps. American Institute of Physics 2011 Article PeerReviewed application/pdf en http://irep.iium.edu.my/9816/1/Dark_Current_Mechanism.pdf Hasbullah, Nurul Fadzlin and David, J. P. R. and Mowbray, D. J. (2011) Dark Current mechanisms in quantum dot laser structures. Journal of Applied Physics, 109 (11). pp. 113111-1. ISSN 0021-8979 http://jap.aip.org/resource/1/japiau/v109/i11/p113111_s1?isAuthorized=no DOI: 10.1063/1.3596524 |
| spellingShingle | TK7885 Computer engineering Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. Dark Current mechanisms in quantum dot laser structures |
| title | Dark Current mechanisms in quantum dot laser structures |
| title_full | Dark Current mechanisms in quantum dot laser structures |
| title_fullStr | Dark Current mechanisms in quantum dot laser structures |
| title_full_unstemmed | Dark Current mechanisms in quantum dot laser structures |
| title_short | Dark Current mechanisms in quantum dot laser structures |
| title_sort | dark current mechanisms in quantum dot laser structures |
| topic | TK7885 Computer engineering |
| url | http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/1/Dark_Current_Mechanism.pdf |