Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

This work reports the effect of doping concentration on the energy-band structure of semiconductor materials. The research focuses on the resultant values of bandgap energy and its depletion region (length/area), based on the initial concentrations of doping which are the donors and acceptors. The e...

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Bibliographic Details
Main Authors: Faris Azim Ahmad Fajri, Faris Azim, Ahmad Fakhrurrazi, Ahmad Noorden, Azni, Abdul Aziz
Format: Proceeding Paper
Language:English
English
Published: Institute of Physics Publishing 2021
Subjects:
QC Physics
Online Access:http://irep.iium.edu.my/73957/
http://irep.iium.edu.my/73957/8/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active_SCOPUS.pdf
http://irep.iium.edu.my/73957/9/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active.pdf

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