Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies

Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies

The widely used CMOS Active Pixel Sensors (APS) in space imaging mission are vulnerable to radiations known as Single Event Transient (SET). This paper focus on 3T and 4T CMOS APS with technology from 130 nm scaling down to 32 nm, simulated using various Linear Energy Transfer (LET) magnitudes rangi...

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Bibliographic Details
Main Authors: Ahamad Sukor, Masturah, Hedzir, Anati Syahira, Sabri, Sharizal Fadlie, Hasbullah, Nurul Fadzlin
Format: Article
Language:English
English
Published: Taylor & Francis Group 2019
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:http://irep.iium.edu.my/72558/
http://irep.iium.edu.my/72558/1/72558_Single%20event%20transient%20effects%20on%203T%20and%204T_complete.pdf
http://irep.iium.edu.my/72558/2/72558_Single%20event%20transient%20effects%20on%203T%20and%204T_scopus.pdf

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