Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

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Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reducti...

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Bibliographic Details
Main Authors:	Mohd Khairi, Mohamad Azim, Ab Rahim, Rosminazuin, Saidin, Norazlina, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English
Published:	Lembaga Penerbitan dan Publikasi Ilmiah (LPPI), Universitas Ahmad Dahlan 2019
Subjects:	QC Physics TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf

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