Material characterization of a doped triangular silicon nanowire using raman spectroscopy

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Material characterization of a doped triangular silicon nanowire using raman spectroscopy

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxi...

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Bibliographic Details
Main Authors:	Za'bah, Nor Farahidah, Md Ralib @ Md Raghib, Aliza 'Aini, Kwa, Kelvin S. K., O'Neill, Anthony
Format:	Article
Language:	English English
Published:	American Scientific Publishers 2018
Subjects:	TA213 Engineering machinery, tools, and implements
Online Access:	http://irep.iium.edu.my/71148/ http://irep.iium.edu.my/71148/1/71148_Material%20Characterization%20of%20a%20Doped%20Triangular.pdf http://irep.iium.edu.my/71148/2/71148_Material%20Characterization%20of%20a%20Doped%20Triangular_WOS.pdf

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