Reliability study of silicon carbide Schottky Diode with fast electron irradiation

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Reliability study of silicon carbide Schottky Diode with fast electron irradiation

The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been...

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Bibliographic Details
Main Authors:	Mohd Khairi, Mohamad Azim, Ab Rahim, Rosminazuin, Saidin, Norazlina, Hasbullah, Nurul Fadzlin, Abdullah, Yusof
Format:	Proceeding Paper
Language:	English English English
Published:	Institute of Electrical and Electronics Engineers Inc. 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf http://irep.iium.edu.my/70791/13/70791_wos.pdf

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