Reliability study of silicon carbide Schottky Diode with fast electron irradiation
The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been...
| Main Authors: | , , , , |
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| Format: | Proceeding Paper |
| Language: | English English English |
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Institute of Electrical and Electronics Engineers Inc.
2018
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| Online Access: | http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf http://irep.iium.edu.my/70791/13/70791_wos.pdf |
| _version_ | 1848787348538523648 |
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| author | Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof |
| author_facet | Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof |
| author_sort | Mohd Khairi, Mohamad Azim |
| building | IIUM Repository |
| collection | Online Access |
| description | The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been decreased by 4.6 and 8.2 orders of magnitude respectively. The reduction is associated with the significant rise in the series resistance (INFINEON: 1.45 Ω to 121×103 Ω; STMICROELECTRONICS: 1.44 Ω to 2.1 × 109 Ω) due to the irradiation-induced defects. Besides that, the reverse leakage current density in INFINEON increased by one order of magnitude while reverse leakage current density in STMICROELECTRONICS decreased by about one order of magnitude. We have also observed an increase in ideality factor (INFINEON: 1.01 to 1.05; STMICROELECTRONICS: 1.02 to 1.3) and saturation current (INFINEON: 1.6×10-17 A to 2.5×10-17 A; STMICROELECTRONICS: 2.4×10-15 A to 8 × 10-15 A) as a result of electron irradiation. Overall, for particular devices studied, INFINEON have better quality devices and more radiation resistance compared to STMICROELECTRONICS. |
| first_indexed | 2025-11-14T17:23:30Z |
| format | Proceeding Paper |
| id | iium-70791 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English English |
| last_indexed | 2025-11-14T17:23:30Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers Inc. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-707912023-08-23T08:10:21Z http://irep.iium.edu.my/70791/ Reliability study of silicon carbide Schottky Diode with fast electron irradiation Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof TK Electrical engineering. Electronics Nuclear engineering The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been decreased by 4.6 and 8.2 orders of magnitude respectively. The reduction is associated with the significant rise in the series resistance (INFINEON: 1.45 Ω to 121×103 Ω; STMICROELECTRONICS: 1.44 Ω to 2.1 × 109 Ω) due to the irradiation-induced defects. Besides that, the reverse leakage current density in INFINEON increased by one order of magnitude while reverse leakage current density in STMICROELECTRONICS decreased by about one order of magnitude. We have also observed an increase in ideality factor (INFINEON: 1.01 to 1.05; STMICROELECTRONICS: 1.02 to 1.3) and saturation current (INFINEON: 1.6×10-17 A to 2.5×10-17 A; STMICROELECTRONICS: 2.4×10-15 A to 8 × 10-15 A) as a result of electron irradiation. Overall, for particular devices studied, INFINEON have better quality devices and more radiation resistance compared to STMICROELECTRONICS. Institute of Electrical and Electronics Engineers Inc. 2018 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf application/pdf en http://irep.iium.edu.my/70791/13/70791_wos.pdf Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Hasbullah, Nurul Fadzlin and Abdullah, Yusof (2018) Reliability study of silicon carbide Schottky Diode with fast electron irradiation. In: 7th International Conference on Computer and Communication Engineering, ICCCE 2018, 19th-20th September 2018, Kuala Lumpur. https://ieeexplore.ieee.org/document/8539343 10.1109/ICCCE.2018.8539343 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof Reliability study of silicon carbide Schottky Diode with fast electron irradiation |
| title | Reliability study of silicon carbide Schottky Diode with fast electron irradiation |
| title_full | Reliability study of silicon carbide Schottky Diode with fast electron irradiation |
| title_fullStr | Reliability study of silicon carbide Schottky Diode with fast electron irradiation |
| title_full_unstemmed | Reliability study of silicon carbide Schottky Diode with fast electron irradiation |
| title_short | Reliability study of silicon carbide Schottky Diode with fast electron irradiation |
| title_sort | reliability study of silicon carbide schottky diode with fast electron irradiation |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf http://irep.iium.edu.my/70791/13/70791_wos.pdf |