About the silicon sensitivity of the deep level with alternating pressure

About the silicon sensitivity of the deep level with alternating pressure

This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation...

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Bibliographic Details
Main Authors: Tursunov, Ikromjon Gulamovich, Okhunov, Abdurahim, Mamatkarimov, Odiljon Oxundadaevich
Format: Article
Language:English
English
English
Published: IIUM Press, International Islamic University Malaysia 2018
Subjects:
QC Physics
Online Access:http://irep.iium.edu.my/67747/
http://irep.iium.edu.my/67747/1/67747_About%20the%20Silicon%20Sensitivity%20of%20the%20Deep.pdf
http://irep.iium.edu.my/67747/7/67747_About%20the%20silicon%20sensitivity_scopus.pdf
http://irep.iium.edu.my/67747/12/67747%20ABOUT%20THE%20SILICON%20SENSITIVITY%20%20WOS.pdf

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