Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode
Half-wave rectifier; buck; and boost converter with electron-irradiated, high-voltage silicon carbide Schottky power diodes from CREE, Inc., performance was studied and presented in this paper subjected to electron radiation. The diodes were irradiated by high-energy (3 MeV) electrons with doses ran...
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| Format: | Article |
| Language: | English English |
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Institute of Advanced Engineering and Science
2020
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| Online Access: | http://irep.iium.edu.my/64436/ http://irep.iium.edu.my/64436/1/64436_Impact%20of%20electron%20radiation%20dose%20to%20the%20performance.pdf http://irep.iium.edu.my/64436/2/64436_Impact%20of%20electron%20radiation%20dose%20to%20the%20performance_SCOPUS.pdf |
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| author | Hasbullah, Nurul Fadzlin Shuhaimi, Nafiz ‘Irfan Abdullah, Yusof Mohd Khairi, Mohamad Azim |
| author_facet | Hasbullah, Nurul Fadzlin Shuhaimi, Nafiz ‘Irfan Abdullah, Yusof Mohd Khairi, Mohamad Azim |
| author_sort | Hasbullah, Nurul Fadzlin |
| building | IIUM Repository |
| collection | Online Access |
| description | Half-wave rectifier; buck; and boost converter with electron-irradiated, high-voltage silicon carbide Schottky power diodes from CREE, Inc., performance was studied and presented in this paper subjected to electron radiation. The diodes were irradiated by high-energy (3 MeV) electrons with doses ranging from 1 to 5 MGy. The performance of the circuits in term of the output voltage were measured before and after the diodes being irradiated. It was observed, at 4 MGy, the half-wave rectifier output voltage degrades by 6.2 times as compared to before irradiation. Meanwhile, the output voltage of the buck converter degrades by 1.7 times; and for boost converter, the degradation of the output voltage is approximately 4.6 times for 4MGy radiation. These degradations are believed to be due to the increase in the series resistance of the Schottky diodes which is caused by the defects introduced inside the semiconductor during the irradiation and also the increase of turn-on voltage of the diodes after being irradiated |
| first_indexed | 2025-11-14T17:05:30Z |
| format | Article |
| id | iium-64436 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T17:05:30Z |
| publishDate | 2020 |
| publisher | Institute of Advanced Engineering and Science |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-644362021-01-22T08:01:44Z http://irep.iium.edu.my/64436/ Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode Hasbullah, Nurul Fadzlin Shuhaimi, Nafiz ‘Irfan Abdullah, Yusof Mohd Khairi, Mohamad Azim QC Physics TK Electrical engineering. Electronics Nuclear engineering TK9001 Nuclear engineering. Atomic power Half-wave rectifier; buck; and boost converter with electron-irradiated, high-voltage silicon carbide Schottky power diodes from CREE, Inc., performance was studied and presented in this paper subjected to electron radiation. The diodes were irradiated by high-energy (3 MeV) electrons with doses ranging from 1 to 5 MGy. The performance of the circuits in term of the output voltage were measured before and after the diodes being irradiated. It was observed, at 4 MGy, the half-wave rectifier output voltage degrades by 6.2 times as compared to before irradiation. Meanwhile, the output voltage of the buck converter degrades by 1.7 times; and for boost converter, the degradation of the output voltage is approximately 4.6 times for 4MGy radiation. These degradations are believed to be due to the increase in the series resistance of the Schottky diodes which is caused by the defects introduced inside the semiconductor during the irradiation and also the increase of turn-on voltage of the diodes after being irradiated Institute of Advanced Engineering and Science 2020-06 Article PeerReviewed application/pdf en http://irep.iium.edu.my/64436/1/64436_Impact%20of%20electron%20radiation%20dose%20to%20the%20performance.pdf application/pdf en http://irep.iium.edu.my/64436/2/64436_Impact%20of%20electron%20radiation%20dose%20to%20the%20performance_SCOPUS.pdf Hasbullah, Nurul Fadzlin and Shuhaimi, Nafiz ‘Irfan and Abdullah, Yusof and Mohd Khairi, Mohamad Azim (2020) Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode. Nuclear Science and Techniques, 8 (2). pp. 298-305. ISSN 20893272 http://section.iaesonline.com/index.php/IJEEI/article/view/2041/508 10.11591/ijeei.v8.i2.2041 |
| spellingShingle | QC Physics TK Electrical engineering. Electronics Nuclear engineering TK9001 Nuclear engineering. Atomic power Hasbullah, Nurul Fadzlin Shuhaimi, Nafiz ‘Irfan Abdullah, Yusof Mohd Khairi, Mohamad Azim Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode |
| title | Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode |
| title_full | Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode |
| title_fullStr | Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode |
| title_full_unstemmed | Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode |
| title_short | Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode |
| title_sort | impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide schottky diode |
| topic | QC Physics TK Electrical engineering. Electronics Nuclear engineering TK9001 Nuclear engineering. Atomic power |
| url | http://irep.iium.edu.my/64436/ http://irep.iium.edu.my/64436/ http://irep.iium.edu.my/64436/ http://irep.iium.edu.my/64436/1/64436_Impact%20of%20electron%20radiation%20dose%20to%20the%20performance.pdf http://irep.iium.edu.my/64436/2/64436_Impact%20of%20electron%20radiation%20dose%20to%20the%20performance_SCOPUS.pdf |