Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation

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Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation

Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor s...

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Bibliographic Details
Main Authors:	Abdullah, Yusof, Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Muridan, Muridan, Norasmahan, Che Hak, Cik Rohaida, Mahat, Sarimah
Format:	Proceeding Paper
Language:	English English
Published:	Scientific.Net 2017
Subjects:	T Technology (General)
Online Access:	http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf

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