Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor s...
| Main Authors: | , , , , , |
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| Format: | Proceeding Paper |
| Language: | English English |
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Scientific.Net
2017
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| Online Access: | http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf |
| _version_ | 1848785951522816000 |
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| author | Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah |
| author_facet | Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah |
| author_sort | Abdullah, Yusof |
| building | IIUM Repository |
| collection | Online Access |
| description | Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V) and current-voltage (IV) characterization for both pre and post irradiation samples was done. Both current and capacitance show decreasing while reverse leakage current increased after irradiation. The reverse leakage current revealed that the current were start leakage at 1.0 x10-7 A and 1.0 x10-9 A for 1000 kGy and 1500 kGy irradiations respectively. The current-voltage graph indicated that the effect of electron irradiation on diode produced weak spots as defect cause leakage current. The traps and bulk defect is believed to contributed to the leakage current increased. |
| first_indexed | 2025-11-14T17:01:18Z |
| format | Proceeding Paper |
| id | iium-63004 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T17:01:18Z |
| publishDate | 2017 |
| publisher | Scientific.Net |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-630042018-03-23T07:09:21Z http://irep.iium.edu.my/63004/ Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah T Technology (General) Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V) and current-voltage (IV) characterization for both pre and post irradiation samples was done. Both current and capacitance show decreasing while reverse leakage current increased after irradiation. The reverse leakage current revealed that the current were start leakage at 1.0 x10-7 A and 1.0 x10-9 A for 1000 kGy and 1500 kGy irradiations respectively. The current-voltage graph indicated that the effect of electron irradiation on diode produced weak spots as defect cause leakage current. The traps and bulk defect is believed to contributed to the leakage current increased. Scientific.Net 2017 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf application/pdf en http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Muridan, Muridan, Norasmahan and Che Hak, Cik Rohaida and Mahat, Sarimah (2017) Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation. In: International Conference on X-rays and Related Techniques in Research and Industry 2016 (ICXRI2016),, 17th to 18 th August 2016, Putrajaya, Malaysia. (In Press) https://www.scientific.net/MSF.888.348 10.4028/www.scientific.net/MSF.888.348 |
| spellingShingle | T Technology (General) Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation |
| title | Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation |
| title_full | Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation |
| title_fullStr | Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation |
| title_full_unstemmed | Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation |
| title_short | Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation |
| title_sort | radiation damage study of electrical properties in gan leds diode after electron irradiation |
| topic | T Technology (General) |
| url | http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf |