Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET

Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET

A major effect of different measurement delay in seconds is revealed through quasi DC Stress Measure Stress experiments. We found that different delay of measurements in seconds contributed to different stress time needed to achieve target 10% degradation of Vth. The longer delay, the more time...

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Bibliographic Details
Main Authors: Hatta, Sharifah Wan M., Hussin, Hanim Yati, Soon, F.Y., Abdul Wahab, Yasmin, Abdul Hadi, Dayanasari, Soin, Norhayati, Alam, A. H.M.Zahirul, Nordin, Anis Nurashikin
Format: Proceeding Paper
Language:English
English
Published: IEEE 2017
Subjects:
T Technology (General)
Online Access:http://irep.iium.edu.my/62886/
http://irep.iium.edu.my/62886/1/62886%20Negative%20Bias%20Temperature%20Instability%20Characterization.pdf
http://irep.iium.edu.my/62886/2/62886%20Negative%20Bias%20Temperature%20Instability%20SCOPUS.pdf

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