Electrical characterization of commercial power MOSFET under electron radiation
This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms...
| Main Authors: | Ayub, Wan Nurhasana, Hasbullah, Nurul Fadzlin, Rashid, Abdul Aish Abdallah |
|---|---|
| Format: | Article |
| Language: | English English |
| Published: |
American Scientific Publishers
2017
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf |
Similar Items
Effects of electron radiation on commercial power MOSFET with buck converter application
by: Abubakkar, Sheik Fareed Ookar, et al.
Published: (2017)
by: Abubakkar, Sheik Fareed Ookar, et al.
Published: (2017)
Investigation of the electrical characteristics of commercial diodes under mixed-radiation
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2012)
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2012)
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
by: Hedzir, Anati Syahirah, et al.
Published: (2016)
by: Hedzir, Anati Syahirah, et al.
Published: (2016)
Electrical characterization of commercial GaN LEDs subjected to electron
radiation with different conveyor speed per pass
by: Hedzir, Anati Syahirah, et al.
Published: (2016)
by: Hedzir, Anati Syahirah, et al.
Published: (2016)
Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)
Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
by: Oo, Myo Min, et al.
Published: (2014)
by: Oo, Myo Min, et al.
Published: (2014)
3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
by: Abubakkar, Sheik Fareed Ookar, et al.
Published: (2014)
by: Abubakkar, Sheik Fareed Ookar, et al.
Published: (2014)
Study of the electrical properties of radiation hard devices based on III-V materials
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2012)
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2012)
Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)
Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)
Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
by: Ahmad Fauzi, D., et al.
Published: (2015)
by: Ahmad Fauzi, D., et al.
Published: (2015)
Characterization of 50 nm MOSFET with dielectric pocket
by: Fauzan, Zul Atfyi, et al.
Published: (2007)
by: Fauzan, Zul Atfyi, et al.
Published: (2007)
Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
by: Youssouf, Abdouraouf S., et al.
Published: (2017)
by: Youssouf, Abdouraouf S., et al.
Published: (2017)
Simulation of 0.18 micron MOSFET and its characterization
by: Ahmad Radzi, Syafeeza
Published: (2005)
by: Ahmad Radzi, Syafeeza
Published: (2005)
Simulation of electrical characterization on lateral silicon-on-insulator PIN Diode for space radiation detector
by: Zainudin, Z., et al.
Published: (2014)
by: Zainudin, Z., et al.
Published: (2014)
Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors
by: Yang, Li, et al.
Published: (2018)
by: Yang, Li, et al.
Published: (2018)
Quantum dots as a solution to radiation hardness
by: Che Omar, Nuurul Iffah, et al.
Published: (2011)
by: Che Omar, Nuurul Iffah, et al.
Published: (2011)
FRGS 15–244–0485 Final Report: Novel Model on Leakage Current Mechanisms of Radiation Hard Silicon Carbide Schottky Diodes
by: Hasbullah, Nurul Fadzlin
Published: (2018)
by: Hasbullah, Nurul Fadzlin
Published: (2018)
Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2020)
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2020)
Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
by: Abdullah, Yusof, et al.
Published: (2017)
by: Abdullah, Yusof, et al.
Published: (2017)
Characterization of strained silicon MOSFET using semiconductor TCAD tools
by: Wong, Yah Jin, et al.
Published: (2006)
by: Wong, Yah Jin, et al.
Published: (2006)
Characterization of planar and vertical n-channel mosfet in nanometer regime
by: Sulaiman, Ima
Published: (2007)
by: Sulaiman, Ima
Published: (2007)
Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
by: Mohd Khairi, Mohamad Azim, et al.
Published: (2019)
by: Mohd Khairi, Mohamad Azim, et al.
Published: (2019)
Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2019)
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2019)
A study on the impact of processing parameters on low-voltage power MOSFET
by: Nur Aqilah, Othman
Published: (2012)
by: Nur Aqilah, Othman
Published: (2012)
Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2017)
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2017)
The dependence of saturation velocity on temperature, inversion charge and electric field in a nanoscale MOSFET
by: Saad, Ismail, et al.
Published: (2010)
by: Saad, Ismail, et al.
Published: (2010)
Effect of electron irradiation on the electrical and optical
characteristics of gallium-nitride light emitting diodes
by: Hedzir, Anati Syahirah, et al.
Published: (2019)
by: Hedzir, Anati Syahirah, et al.
Published: (2019)
Effects of neutron irradiation on various electronic devices
by: Che Omar, Nuurul Iffah, et al.
Published: (2011)
by: Che Omar, Nuurul Iffah, et al.
Published: (2011)
Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)
by: M. N., Zul Atfyi Fauzan, et al.
Published: (2008)
by: M. N., Zul Atfyi Fauzan, et al.
Published: (2008)
Modeling MOSFETs by using C++
by: Roy Stephen, Joel Jimbai.
Published: (2009)
by: Roy Stephen, Joel Jimbai.
Published: (2009)
Penguatkuasa VHF Menggunakan Mosfet Kuasa
by: Abu Hasan, Juniah
Published: (2006)
by: Abu Hasan, Juniah
Published: (2006)
Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique
by: Morsin, Marlia
Published: (2004)
by: Morsin, Marlia
Published: (2004)
Optimization of thermal management and power density of small-scale wind turbine applications using SiC-MOSFETs
by: Hussein, Abdallah, et al.
Published: (2017)
by: Hussein, Abdallah, et al.
Published: (2017)
Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
by: Mohd Khairi, Mohamad Azim, et al.
Published: (2019)
by: Mohd Khairi, Mohamad Azim, et al.
Published: (2019)
Microcontroller based variable gate voltage for MOSFET
by: Nuripaizail, Ahmad
Published: (2008)
by: Nuripaizail, Ahmad
Published: (2008)
Modeling the effect of velocity saturation in nanoscale MOSFET
by: Tan, Michael Loong Peng
Published: (2006)
by: Tan, Michael Loong Peng
Published: (2006)
Characterization of pMosfet degradation in negative bias temperature instability test / Soon Foo Yew
by: Soon, Foo Yew
Published: (2012)
by: Soon, Foo Yew
Published: (2012)
UIS failure mechanism of SiC power MOSFETs
by: Fayyaz, Asad, et al.
Published: (2016)
by: Fayyaz, Asad, et al.
Published: (2016)
Performance and robustness characterisation of SiC power MOSFETs
by: Fayyaz, Asad
Published: (2018)
by: Fayyaz, Asad
Published: (2018)
Similar Items
-
Effects of electron radiation on commercial power MOSFET with buck converter application
by: Abubakkar, Sheik Fareed Ookar, et al.
Published: (2017) -
Investigation of the electrical characteristics of commercial diodes under mixed-radiation
by: Hasbullah, Nurul Fadzlin, et al.
Published: (2012) -
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
by: Hedzir, Anati Syahirah, et al.
Published: (2016) -
Electrical characterization of commercial GaN LEDs subjected to electron
radiation with different conveyor speed per pass
by: Hedzir, Anati Syahirah, et al.
Published: (2016) -
Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)