Electrical characterization of commercial power MOSFET under electron radiation
This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms...
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| Format: | Article |
| Language: | English English |
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American Scientific Publishers
2017
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| Online Access: | http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf |
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| author | Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah |
| author_facet | Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah |
| author_sort | Ayub, Wan Nurhasana |
| building | IIUM Repository |
| collection | Online Access |
| description | This paper presents the threshold voltage shifts for both p-channel and n-channel commercial
power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of
electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms
of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel
MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiationinduced
positive charges dominated in the oxide traps while for p-channel devices it is believed due to
radiation-induced ionization damage. |
| first_indexed | 2025-11-14T17:00:44Z |
| format | Article |
| id | iium-62829 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T17:00:44Z |
| publishDate | 2017 |
| publisher | American Scientific Publishers |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-628292018-07-10T18:20:43Z http://irep.iium.edu.my/62829/ Electrical characterization of commercial power MOSFET under electron radiation Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah TK Electrical engineering. Electronics Nuclear engineering This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiationinduced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage. American Scientific Publishers 2017-11 Article PeerReviewed application/pdf en http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf application/pdf en http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752 E-ISSN 2502-4760 http://www.iaescore.com/journals/index.php/IJEECS/article/viewFile/10015/7649 10.11591/ijeecs.v8.i2.pp462-466 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah Electrical characterization of commercial power MOSFET under electron radiation |
| title | Electrical characterization of commercial power MOSFET under electron radiation |
| title_full | Electrical characterization of commercial power MOSFET under electron radiation |
| title_fullStr | Electrical characterization of commercial power MOSFET under electron radiation |
| title_full_unstemmed | Electrical characterization of commercial power MOSFET under electron radiation |
| title_short | Electrical characterization of commercial power MOSFET under electron radiation |
| title_sort | electrical characterization of commercial power mosfet under electron radiation |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf |