Resistive switching of Cu/Cu2O junction fabricated using
simple thermal oxidation at 423 K for memristor application

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Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electro...

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Bibliographic Details
Main Authors:	Ani, Mohd Hanafi, Helmi, F, Herman, Sukreen Hana, Syed Abu Bakar, Syed Noh
Format:	Proceeding Paper
Language:	English English
Published:	IOP Publishing 2018
Subjects:	TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf

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