Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electro...
| Main Authors: | , , , |
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| Format: | Proceeding Paper |
| Language: | English English |
| Published: |
IOP Publishing
2018
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| Online Access: | http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf |
| _version_ | 1848785846198599680 |
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| author | Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh |
| author_facet | Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh |
| author_sort | Ani, Mohd Hanafi |
| building | IIUM Repository |
| collection | Online Access |
| description | Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM,
and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous
studies using other methods. |
| first_indexed | 2025-11-14T16:59:38Z |
| format | Proceeding Paper |
| id | iium-62457 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:59:38Z |
| publishDate | 2018 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-624572018-06-29T04:06:40Z http://irep.iium.edu.my/62457/ Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh TA401 Materials of engineering and construction Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods. IOP Publishing 2018-01-30 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf application/pdf en http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf Ani, Mohd Hanafi and Helmi, F and Herman, Sukreen Hana and Syed Abu Bakar, Syed Noh (2018) Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application. In: International Conference on Advances in Manufacturing and Materials Engineering (ICAMME 2017), 8th–9th August 2017, Kuala Lumpur, Malaysia. http://iopscience.iop.org/article/10.1088/1757-899X/290/1/012088/pdf doi:10.1088/1757-899X/290/1/012088 |
| spellingShingle | TA401 Materials of engineering and construction Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application |
| title | Resistive switching of Cu/Cu2O junction fabricated using
simple thermal oxidation at 423 K for memristor application |
| title_full | Resistive switching of Cu/Cu2O junction fabricated using
simple thermal oxidation at 423 K for memristor application |
| title_fullStr | Resistive switching of Cu/Cu2O junction fabricated using
simple thermal oxidation at 423 K for memristor application |
| title_full_unstemmed | Resistive switching of Cu/Cu2O junction fabricated using
simple thermal oxidation at 423 K for memristor application |
| title_short | Resistive switching of Cu/Cu2O junction fabricated using
simple thermal oxidation at 423 K for memristor application |
| title_sort | resistive switching of cu/cu2o junction fabricated using
simple thermal oxidation at 423 k for memristor application |
| topic | TA401 Materials of engineering and construction |
| url | http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf |