Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed s...
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| Format: | Article |
| Language: | English English |
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Penerbit Universiti Kebangsaan Malaysia
2017
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| Online Access: | http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf |
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| author | Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi |
| author_facet | Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi |
| author_sort | Sirat, Mohd Shukri |
| building | IIUM Repository |
| collection | Online Access |
| description | The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene. |
| first_indexed | 2025-11-14T16:54:36Z |
| format | Article |
| id | iium-60671 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:54:36Z |
| publishDate | 2017 |
| publisher | Penerbit Universiti Kebangsaan Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-606712018-05-04T08:46:16Z http://irep.iium.edu.my/60671/ Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi TA401 Materials of engineering and construction TP155 Chemical engineering The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene. Penerbit Universiti Kebangsaan Malaysia 2017-07 Article PeerReviewed application/pdf en http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf application/pdf en http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf Sirat, Mohd Shukri and Ismail, Edhuan and Purwanto, Hadi and Mohd Abid, Mohd Asyadi Azam and Ani, Mohd Hanafi (2017) Growth conditions of graphene grown in Chemical Vapour Deposition (CVD). Sains Malaysiana, 46 (7). pp. 1033-1038. ISSN 0126-6039 http://www.ukm.my/jsm/pdf_files/SM-PDF-46-7-2017/04%20Mohamad%20Shukri%20Sirat.pdf 10.17576/jsm-2017-4607-04 |
| spellingShingle | TA401 Materials of engineering and construction TP155 Chemical engineering Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) |
| title | Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) |
| title_full | Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) |
| title_fullStr | Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) |
| title_full_unstemmed | Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) |
| title_short | Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) |
| title_sort | growth conditions of graphene grown in chemical vapour deposition (cvd) |
| topic | TA401 Materials of engineering and construction TP155 Chemical engineering |
| url | http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf |