A comparative analysis of the effect of temperature on band-gap energy of gallium nitride and its stability beyond room temperature using a Bose–Einstein model and Varshni'S model

A comparative analysis of the effect of temperature on band-gap energy of gallium nitride and its stability beyond room temperature using a Bose–Einstein model and Varshni'S model

High temperature stability of the band-gap energy of the active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy-dependent characteristics of the se...

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Bibliographic Details
Main Authors: Al Humayun, Md Abdullah, Alam, A. H. M. Zahirul, Khan, Sheroz, Abdul Malek, Mohamed Fareq, Rashid, Mohd Abdur
Format: Article
Language:English
English
Published: International Islamic University Malaysia-IIUM 2017
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/59526/
http://irep.iium.edu.my/59526/13/59526_A%20comparative%20analysis%20of%20the%20effect%20of%20temperature_article.pdf
http://irep.iium.edu.my/59526/7/59526_A%20comparative%20analysis%20of%20the%20effect%20of%20temperature%20on%20band-gap%20energy%20of%20gallium%20nitride_SCOPUS.pdf

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