Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation

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Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation

In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliab...

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Bibliographic Details
Main Authors:	Ahmad Fauzi, Dhiyauddin, Alang Rashid, Nahrul Khair, Mohamed Zin, Muhammad Rawi, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English English
Published:	IIUM Press 2017
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf

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