Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliab...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English English English |
| Published: |
IIUM Press
2017
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf |
| _version_ | 1848784991539953664 |
|---|---|
| author | Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin |
| author_facet | Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin |
| author_sort | Ahmad Fauzi, Dhiyauddin |
| building | IIUM Repository |
| collection | Online Access |
| description | In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diodes (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in a PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample was less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample. |
| first_indexed | 2025-11-14T16:46:02Z |
| format | Article |
| id | iium-57752 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English English |
| last_indexed | 2025-11-14T16:46:02Z |
| publishDate | 2017 |
| publisher | IIUM Press |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-577522017-10-09T09:14:53Z http://irep.iium.edu.my/57752/ Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin TA Engineering (General). Civil engineering (General) In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diodes (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in a PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample was less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample. IIUM Press 2017 Article PeerReviewed application/pdf en http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf application/pdf en http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf Ahmad Fauzi, Dhiyauddin and Alang Rashid, Nahrul Khair and Mohamed Zin, Muhammad Rawi and Hasbullah, Nurul Fadzlin (2017) Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation. IIUM Engineering Journal, 18 (1). pp. 101-109. ISSN 1511-788X E-ISSN 2289-7860 http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/653 |
| spellingShingle | TA Engineering (General). Civil engineering (General) Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation |
| title | Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation |
| title_full | Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation |
| title_fullStr | Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation |
| title_full_unstemmed | Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation |
| title_short | Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation |
| title_sort | radiation performance of gan and inas/gaas quantum dot based devices subjected to neutron radiation |
| topic | TA Engineering (General). Civil engineering (General) |
| url | http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf |