Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption
We investigated the dispersion structure of the hole subbands in vicinal Si(111)4 ' 1-In surfaces directly by angle-resolved photoelectron spectroscopy. In this study, three inversion layers with different impurity concentrations and numbers of times of flash annealing (FA) were investigated....
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English English |
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Japan Society of Applied Physics
2015
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| Online Access: | http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/1/JJAPPublished.pdf http://irep.iium.edu.my/56962/7/56962_Unusual%20energy%20separation_scopus.pdf |
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| author | Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi |
| author_facet | Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi |
| author_sort | Ayob, Nur Idayu |
| building | IIUM Repository |
| collection | Online Access |
| description | We investigated the dispersion structure of the hole subbands in vicinal Si(111)4 ' 1-In surfaces directly by angle-resolved photoelectron
spectroscopy. In this study, three inversion layers with different impurity concentrations and numbers of times of flash annealing (FA) were
investigated. We observed wider energy separations of subbands levels for the sample with a less number of FA and a higher impurity
concentration. However, the observed energy levels and separations had smaller binding energy than those calculated by triangle potential
approximation. We found that the discrepancies were due to the out-diffusion of Arsenic atoms from the sub-surface region of silicon via high
temperature FA. The possible potential profile of the space charge layer after considering the out-diffusion of Arsenic dopant atoms at the subsurface
region was proposed. |
| first_indexed | 2025-11-14T16:43:39Z |
| format | Article |
| id | iium-56962 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:43:39Z |
| publishDate | 2015 |
| publisher | Japan Society of Applied Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-569622018-01-04T08:50:23Z http://irep.iium.edu.my/56962/ Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi QC Physics T Technology (General) We investigated the dispersion structure of the hole subbands in vicinal Si(111)4 ' 1-In surfaces directly by angle-resolved photoelectron spectroscopy. In this study, three inversion layers with different impurity concentrations and numbers of times of flash annealing (FA) were investigated. We observed wider energy separations of subbands levels for the sample with a less number of FA and a higher impurity concentration. However, the observed energy levels and separations had smaller binding energy than those calculated by triangle potential approximation. We found that the discrepancies were due to the out-diffusion of Arsenic atoms from the sub-surface region of silicon via high temperature FA. The possible potential profile of the space charge layer after considering the out-diffusion of Arsenic dopant atoms at the subsurface region was proposed. Japan Society of Applied Physics 2015-06-01 Article PeerReviewed application/pdf en http://irep.iium.edu.my/56962/1/JJAPPublished.pdf application/pdf en http://irep.iium.edu.my/56962/7/56962_Unusual%20energy%20separation_scopus.pdf Ayob, Nur Idayu and Takeda, Sakura Nishino and Sakata, Tomohiro and Yoshikawa, Masaaki and Morita, Makoto and Daimon, Hiroshi (2015) Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption. Japanese Journal of Applied Physics, 54 (6). 065702-1-065702-7. ISSN 0021-4922 E-ISSN 1347-4065 http://iopscience.iop.org/article/10.7567/JJAP.54.065702/pdf 10.7567/JJAP.54.065702 |
| spellingShingle | QC Physics T Technology (General) Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption |
| title | Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption |
| title_full | Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption |
| title_fullStr | Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption |
| title_full_unstemmed | Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption |
| title_short | Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption |
| title_sort | unusual energy separation of subbands in si(111) p-channels induced by in adsorption |
| topic | QC Physics T Technology (General) |
| url | http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/1/JJAPPublished.pdf http://irep.iium.edu.my/56962/7/56962_Unusual%20energy%20separation_scopus.pdf |