A review of leakage current mechanism in nitride based light emitting diode
We review the dominant mechanism and characteristics which give rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). The existence of leakage current can affect the reliability and efficiency of LED. Hence, to understand the mechanism that is resp...
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| Format: | Article |
| Language: | English English |
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Penerbit UTM Press
2016
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| Online Access: | http://irep.iium.edu.my/56260/ http://irep.iium.edu.my/56260/1/56260_A%20review%20of%20leakage%20current%20mechanism%20in%20nitride%20based%20light.pdf http://irep.iium.edu.my/56260/7/56260_A%20review%20of%20leakage%20current%20mechanism_WOS.pdf |
| _version_ | 1848784703639781376 |
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| author | Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin |
| author_facet | Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin |
| author_sort | Hedzir, Anati Syahirah |
| building | IIUM Repository |
| collection | Online Access |
| description | We review the dominant mechanism and characteristics which give rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). The existence of leakage current can affect the reliability and efficiency of LED. Hence, to understand the mechanism that is responsible for its existence, the occurrence of leakage current is divided into three main
parameters: 1) low bias; 2) medium or high bias; 3) temperature dependence. For reverse bias, many reports suggest Poole-Frenkel as the dominant mechanism in low reverse bias and some others suggested the field dependent tunneling mechanism. In high reverse bias, many studies have shown tunneling to be the dominant mechanism. However ,there is also few other papers suggesting variable range hopping (VRH) or PF being a dominant mechanism. When the reverse bias currentvoltage
measurement below 200 K, majority studies reported VRH to be the dominant mechanism. Meanwhile, for forward bias, defect-assisted tunneling is most likely the dominant mechanism. At low forward voltages, electrons are believed to be the dominant carriers for defect assisted tunneling, while holes are reported to be likely the dominant carrier in medium forward voltages. |
| first_indexed | 2025-11-14T16:41:28Z |
| format | Article |
| id | iium-56260 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:41:28Z |
| publishDate | 2016 |
| publisher | Penerbit UTM Press |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-562602017-04-05T06:34:25Z http://irep.iium.edu.my/56260/ A review of leakage current mechanism in nitride based light emitting diode Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin TA Engineering (General). Civil engineering (General) We review the dominant mechanism and characteristics which give rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). The existence of leakage current can affect the reliability and efficiency of LED. Hence, to understand the mechanism that is responsible for its existence, the occurrence of leakage current is divided into three main parameters: 1) low bias; 2) medium or high bias; 3) temperature dependence. For reverse bias, many reports suggest Poole-Frenkel as the dominant mechanism in low reverse bias and some others suggested the field dependent tunneling mechanism. In high reverse bias, many studies have shown tunneling to be the dominant mechanism. However ,there is also few other papers suggesting variable range hopping (VRH) or PF being a dominant mechanism. When the reverse bias currentvoltage measurement below 200 K, majority studies reported VRH to be the dominant mechanism. Meanwhile, for forward bias, defect-assisted tunneling is most likely the dominant mechanism. At low forward voltages, electrons are believed to be the dominant carriers for defect assisted tunneling, while holes are reported to be likely the dominant carrier in medium forward voltages. Penerbit UTM Press 2016 Article PeerReviewed application/pdf en http://irep.iium.edu.my/56260/1/56260_A%20review%20of%20leakage%20current%20mechanism%20in%20nitride%20based%20light.pdf application/pdf en http://irep.iium.edu.my/56260/7/56260_A%20review%20of%20leakage%20current%20mechanism_WOS.pdf Hedzir, Anati Syahirah and Muridan, Norasmahan and Hasbullah, Nurul Fadzlin (2016) A review of leakage current mechanism in nitride based light emitting diode. Malaysian Journal of Fundamental and Applied Sciences, 12 (2). pp. 77-84. ISSN 2289-5981 E-ISSN 2289-599X http://www.mjfas.utm.my/index.php/mjfas/article/view/412 |
| spellingShingle | TA Engineering (General). Civil engineering (General) Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin A review of leakage current mechanism in nitride based light emitting diode |
| title | A review of leakage current mechanism in nitride based light emitting diode |
| title_full | A review of leakage current mechanism in nitride based light emitting diode |
| title_fullStr | A review of leakage current mechanism in nitride based light emitting diode |
| title_full_unstemmed | A review of leakage current mechanism in nitride based light emitting diode |
| title_short | A review of leakage current mechanism in nitride based light emitting diode |
| title_sort | review of leakage current mechanism in nitride based light emitting diode |
| topic | TA Engineering (General). Civil engineering (General) |
| url | http://irep.iium.edu.my/56260/ http://irep.iium.edu.my/56260/ http://irep.iium.edu.my/56260/1/56260_A%20review%20of%20leakage%20current%20mechanism%20in%20nitride%20based%20light.pdf http://irep.iium.edu.my/56260/7/56260_A%20review%20of%20leakage%20current%20mechanism_WOS.pdf |