Enhance TL response due to radiation defects in Ge doped silica preforms
Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were fabricated, obtained using a different flow rate and deposition temperature for each case. Results fr...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier Limited
2015
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/55550/ http://irep.iium.edu.my/55550/1/shafiqah_enhance%20TL%20response.pdf |
| _version_ | 1848784598775889920 |
|---|---|
| author | Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley |
| author_facet | Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley |
| author_sort | Ahmad Shaharuddin, Siti Shafiqah |
| building | IIUM Repository |
| collection | Online Access |
| description | Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated
using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were
fabricated, obtained using a different flow rate and deposition temperature for each case. Results from
the absorption spectra of the samples show a signature absorption peak at 5.1 eV and 6.8 eV, indicative of
oxygen-deficient and oxygen-rich defects respectively. The TL efficiency for both Ge samples were
compared with the standard phosphor-based (LiF) thermoluminescence dosimeter, TLD100. For both
sample types, a linear response has been obtained over the dose range 1–10 Gy. Analysis further showed
the oxygen deficient Ge-doped silica sample provides a very much greater TL yield than TLD100, at
890 nC/Gy compared to 220 nC/Gy. Conversely, the oxygen rich sample gave a more limited response,
with a sensitivity of 75 nC/Gy. |
| first_indexed | 2025-11-14T16:39:48Z |
| format | Article |
| id | iium-55550 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T16:39:48Z |
| publishDate | 2015 |
| publisher | Elsevier Limited |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-555502017-02-13T16:32:55Z http://irep.iium.edu.my/55550/ Enhance TL response due to radiation defects in Ge doped silica preforms Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley QC Physics Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were fabricated, obtained using a different flow rate and deposition temperature for each case. Results from the absorption spectra of the samples show a signature absorption peak at 5.1 eV and 6.8 eV, indicative of oxygen-deficient and oxygen-rich defects respectively. The TL efficiency for both Ge samples were compared with the standard phosphor-based (LiF) thermoluminescence dosimeter, TLD100. For both sample types, a linear response has been obtained over the dose range 1–10 Gy. Analysis further showed the oxygen deficient Ge-doped silica sample provides a very much greater TL yield than TLD100, at 890 nC/Gy compared to 220 nC/Gy. Conversely, the oxygen rich sample gave a more limited response, with a sensitivity of 75 nC/Gy. Elsevier Limited 2015-02-26 Article PeerReviewed application/pdf en http://irep.iium.edu.my/55550/1/shafiqah_enhance%20TL%20response.pdf Ahmad Shaharuddin, Siti Shafiqah and Mohd Amin, Yusoff and Md. Nor, Roslan and Tamchek, Nizam and D.A, Bradley (2015) Enhance TL response due to radiation defects in Ge doped silica preforms. Radiation Physics and Chemistry. pp. 87-90. ISSN 0969-806X (In Press) |
| spellingShingle | QC Physics Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley Enhance TL response due to radiation defects in Ge doped silica preforms |
| title | Enhance TL response due to radiation defects in Ge doped silica preforms |
| title_full | Enhance TL response due to radiation defects in Ge doped silica preforms |
| title_fullStr | Enhance TL response due to radiation defects in Ge doped silica preforms |
| title_full_unstemmed | Enhance TL response due to radiation defects in Ge doped silica preforms |
| title_short | Enhance TL response due to radiation defects in Ge doped silica preforms |
| title_sort | enhance tl response due to radiation defects in ge doped silica preforms |
| topic | QC Physics |
| url | http://irep.iium.edu.my/55550/ http://irep.iium.edu.my/55550/1/shafiqah_enhance%20TL%20response.pdf |