Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy...
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| Format: | Proceeding Paper |
| Language: | English English |
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IEEE
2016
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| Online Access: | http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/1/54639.pdf http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf |
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| author | Yazeer, Mohamed Jameel Za’bah, Nor Farahidah Alam, A.H.M. Zahirul |
| author_facet | Yazeer, Mohamed Jameel Za’bah, Nor Farahidah Alam, A.H.M. Zahirul |
| author_sort | Yazeer, Mohamed Jameel |
| building | IIUM Repository |
| collection | Online Access |
| description | The demands and expectations of high
performance devices using Field Effect Transistors (FETs) are
increased day by day. In order to obtain transistors with smaller
size but with increased speed and performance, device scaling
was done. However, making transistor in smaller size is not an
easy task. One of the challenges with scaling the size of transistor
is the short channel effects (SCEs). In order to reduce short
channel effects, non-classical FETs were introduced. On top of
that, the next transistor technology that was looked into was the
semiconductor nanowire FET. In this work, a triangular shaped
silicon nanowire (Si NW) FET with 300 nm channel length was
designed using latest finite element analysis tool COMSOL
Multiphysics and its SCE parameters were measured. The
designed triangular shaped Si NW FET shows better
performance in reducing the SCEs when compared with a similar
sized cylindrical shaped Si NW FET and commercial MOSFET,
(ZVNL120A). |
| first_indexed | 2025-11-14T16:37:21Z |
| format | Proceeding Paper |
| id | iium-54639 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:37:21Z |
| publishDate | 2016 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-546392017-03-29T00:52:04Z http://irep.iium.edu.my/54639/ Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics Yazeer, Mohamed Jameel Za’bah, Nor Farahidah Alam, A.H.M. Zahirul T Technology (General) The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy task. One of the challenges with scaling the size of transistor is the short channel effects (SCEs). In order to reduce short channel effects, non-classical FETs were introduced. On top of that, the next transistor technology that was looked into was the semiconductor nanowire FET. In this work, a triangular shaped silicon nanowire (Si NW) FET with 300 nm channel length was designed using latest finite element analysis tool COMSOL Multiphysics and its SCE parameters were measured. The designed triangular shaped Si NW FET shows better performance in reducing the SCEs when compared with a similar sized cylindrical shaped Si NW FET and commercial MOSFET, (ZVNL120A). IEEE 2016 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/54639/1/54639.pdf application/pdf en http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf Yazeer, Mohamed Jameel and Za’bah, Nor Farahidah and Alam, A.H.M. Zahirul (2016) Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur. http://ieeexplore.ieee.org/document/7808367/ 10.1109/ICCCE.2016.109 |
| spellingShingle | T Technology (General) Yazeer, Mohamed Jameel Za’bah, Nor Farahidah Alam, A.H.M. Zahirul Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics |
| title | Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics |
| title_full | Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics |
| title_fullStr | Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics |
| title_full_unstemmed | Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics |
| title_short | Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics |
| title_sort | triangular shaped silicon nanowire fet characterization using comsol multiphysics |
| topic | T Technology (General) |
| url | http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/1/54639.pdf http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf |