Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation

QR Code

Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation

In this paper, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Previous studies...

Full description

Bibliographic Details
Main Authors:	Youssouf, Abdouraouf S., Habaebi, Mohamed Hadi, Ibrahim, S.Noorjannah, Hasbullah, Nurul Fadzlin
Format:	Proceeding Paper
Language:	English English English
Published:	IEEE 2017
Subjects:	TK5101 Telecommunication. Including telegraphy, radio, radar, television
Online Access:	http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/14/54043-edited.pdf http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf http://irep.iium.edu.my/54043/26/54043_wos.pdf

Similar Items

Modelling and Simulation of Si/SiGe Heterostructure Devices
by: Abd. Rasheid, Norulhuda
Published: (2002)

Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)

Study on the performance enhancement mechanism of the mosfet device based on Si/SiGe strained silicon / Hashimah Hashim and Ahmad Sabirin Zoolfakar
by: Hashim, Hashimah, et al.
Published: (2007)

Sub 0.15dB Noise Figure Room Temperature GaAs LNA for Next Generation Radio Telescope
by: Witvers, R., et al.
Published: (2010)

Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
by: Poh, B. S.
Published: (1984)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)

Distribution of ga vacancies in Zn diffused GaAs
by: Zahari Mohamed Darus,, et al.
Published: (1992)

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)

Design Of 0.13-Μm Cmos Lna With Flat Gain For Cognitive Radio Application_Design Of 0.13-Μm Cmos Lna With Flat Gain For Cognitive Radio Application
by: Zhaki, Faris Amsyar Ahmad
Published: (2017)

Design Of 0.13-µm CMOS LNA With Flat Gain For Cognitive Radio Application
by: Roslan, Muhammad Asyraf
Published: (2018)

Self-healing in fractured GaAs nanowires
by: Wang, Jun, et al.
Published: (2012)

Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2017)

Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
by: Sanchez, A. M., et al.
Published: (2009)

The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)

Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
by: Ahmad Fauzi, D., et al.
Published: (2015)

Happy pets shop / Vianney Siging... [et al.]
by: Siging, Vianney, et al.
Published: (2014)

Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Effect of irradiation upon single layer graphene on SiO 2 /Si substrate using Electron Beam Irradiation (EBI)
by: Zamzuri, Ahmad Syahmi, et al.
Published: (2018)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

Experimental Study Of InGaP/GaAs DHBTS With Composite Collector
by: Poh, Zi-Song
Published: (2009)

Conversion Efficiency Improvement in GaAs Solar Cells
by: Das, Narottam, et al.
Published: (2014)

Self-healing of GaAs nanowires: An atomistic study
by: Wang, Jun, et al.
Published: (2012)

Thermal stablity of heavily carbon-doped GaAs
by: Meng , Suan Uang, et al.
Published: (2004)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

An analysis of the electron trajectory in the vicinity of GaAs quantum dot
by: Hanafi Ithnin,, et al.
Published: (2014)

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
by: Bhunia, Amit, et al.
Published: (2018)

Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes
by: Teffahi, A., et al.
Published: (2016)

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
by: Ahmad Kamarudin, Mazliana, et al.
Published: (2011)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
by: Parimon, Norfarariyanti, et al.
Published: (2008)

Influence of electron irradiation on the electroluminescence spectra of white InGaN light emitting diodes
by: Hedzir, Anati Syahirah, et al.
Published: (2018)

Photoluminescence and raman scattering of GaAs1-xBix alloy
by: L. Hasanah,, et al.
Published: (2020)

Size-dependent brittle-to-ductile transition in GaAs nano-rods
by: Wang, J., et al.
Published: (2014)

Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
by: Mahmood, Ahmed, et al.
Published: (2018)

Optimal nano dimensional channel of GaAs-FinFET transistor
by: Ahmed, Mahmood, et al.
Published: (2018)

GaAs PHEMT single-ended mixers for 28 GHz applications
by: Rahman, Nuriha Abd, et al.
Published: (2004)