NEGF-based transport phenomena for semiconduncting CNTFET

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NEGF-based transport phenomena for semiconduncting CNTFET

A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is...

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Bibliographic Details
Main Authors:	Farhana, Soheli, Alam, A H M Zahirul, Khan, Sheroz, Motakabber, S M A
Format:	Proceeding Paper
Language:	English English
Published:	IEEE 2015
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/53226/ http://irep.iium.edu.my/53226/12/53226.pdf http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf

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