Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch
Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major reliability issue during production. A new method based on finite-element- method simulation is developed in this paper to analyze the dielectric charging effect on the RF-MEMS switch’s pull voltages (na...
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| Format: | Proceeding Paper |
| Language: | English English |
| Published: |
2016
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| Online Access: | http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/8/52755-new.pdf http://irep.iium.edu.my/52755/9/52755-Theoretical%20and%20simulated%20investigation%20of%20dielectric%20charging%20effect%20on%20a%20capacitive%20RF-MEMS%20switch_SCOPUS.pdf |
| _version_ | 1848784116260012032 |
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| author | Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_facet | Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_sort | Ma, Li Ya |
| building | IIUM Repository |
| collection | Online Access |
| description | Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major reliability issue during production. A new method based on finite-element- method simulation is developed in this paper to analyze the dielectric charging effect on the RF-MEMS switch’s pull voltages (namely, pull-in and pull-out voltages). The pull voltages have been simulated by using a triangular voltage input; and the actuation time has been obtained by using a step-up bias voltage. The charge effect on the pull voltages due to parasitic charges has been discussed. And the effect of dielectric surface roughness on the switch performance is also deliberated. The study results show that in order to develop a long-lifetime RF-MEMS switch, a small actuation voltage with a flat-dielectric-layer design is preferred. In the end a two-step bipolar rectangular waveform as bias voltage has been proposed additionally for long-lifetime purpose. |
| first_indexed | 2025-11-14T16:32:08Z |
| format | Proceeding Paper |
| id | iium-52755 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:32:08Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-527552016-11-30T07:40:57Z http://irep.iium.edu.my/52755/ Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major reliability issue during production. A new method based on finite-element- method simulation is developed in this paper to analyze the dielectric charging effect on the RF-MEMS switch’s pull voltages (namely, pull-in and pull-out voltages). The pull voltages have been simulated by using a triangular voltage input; and the actuation time has been obtained by using a step-up bias voltage. The charge effect on the pull voltages due to parasitic charges has been discussed. And the effect of dielectric surface roughness on the switch performance is also deliberated. The study results show that in order to develop a long-lifetime RF-MEMS switch, a small actuation voltage with a flat-dielectric-layer design is preferred. In the end a two-step bipolar rectangular waveform as bias voltage has been proposed additionally for long-lifetime purpose. 2016 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/52755/8/52755-new.pdf application/pdf en http://irep.iium.edu.my/52755/9/52755-Theoretical%20and%20simulated%20investigation%20of%20dielectric%20charging%20effect%20on%20a%20capacitive%20RF-MEMS%20switch_SCOPUS.pdf Ma, Li Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2016) Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch. In: 12th IEEE International Conference on Semiconductor Electronics (ICSE 2016), 17th-19th August 2016, Kuala Lumpur. http://ieeexplore.ieee.org/document/7573580/ 10.1109/SMELEC.2016.7573580 |
| spellingShingle | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch |
| title | Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch |
| title_full | Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch |
| title_fullStr | Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch |
| title_full_unstemmed | Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch |
| title_short | Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch |
| title_sort | theoretical and simulated investigation of dielectric charging effect on a capacitive rf-mems switch |
| topic | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/8/52755-new.pdf http://irep.iium.edu.my/52755/9/52755-Theoretical%20and%20simulated%20investigation%20of%20dielectric%20charging%20effect%20on%20a%20capacitive%20RF-MEMS%20switch_SCOPUS.pdf |