A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
This paper presents a novel design and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9V while it can be operated in a robust condition with maximum von Mises stress of 13...
| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English English |
| Published: |
IEEE
2018
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| Online Access: | http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/2/52022.pdf http://irep.iium.edu.my/52022/3/52022-A%20novel%20design%20of%20low-voltage%20low-loss%20K-Band%20RF-MEMS%20capacitive%20switch_SCOPUS.pdf |
| _version_ | 1848783979364220928 |
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| author | Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_facet | Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_sort | Ma, Li-Ya |
| building | IIUM Repository |
| collection | Online Access |
| description | This paper presents a novel design and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9V while it can be operated in a robust condition with maximum von Mises stress of 13.208 MPa which is less than aluminum’s yield stress. By finite-element-modeling (FEM) simulations, at switch-on state, insertion loss and reflection loss of the proposed RF-MEMS switch is obtained as -0.8023dB and -7.983dB, respectively; and at switch-off state, isolation and return loss is -22.45dB and - 0.8666dB, respectively. In order to improve the switch-on reflection loss to meet design specifications, two short high- impedance sections of transmission line have been calculated and added to the RF-MEMS switch. Then the reflection coefficient at switch-on state has been increased by 78.13% to -14.22dB which is less than -10dB while the insertion loss, isolation and return loss are all improved by 66.54%, 13.36% and 11.65%, respectively, with 65ohm high-impedance lines. The RF-MEMS switch’s actuation time of 27μs is obtained. A detail comparison among the proposed RF-MEMS switch and other state-of-the-art designs has been summarized in the end. |
| first_indexed | 2025-11-14T16:29:57Z |
| format | Proceeding Paper |
| id | iium-52022 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:29:57Z |
| publishDate | 2018 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-520222019-07-18T06:46:18Z http://irep.iium.edu.my/52022/ A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper presents a novel design and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9V while it can be operated in a robust condition with maximum von Mises stress of 13.208 MPa which is less than aluminum’s yield stress. By finite-element-modeling (FEM) simulations, at switch-on state, insertion loss and reflection loss of the proposed RF-MEMS switch is obtained as -0.8023dB and -7.983dB, respectively; and at switch-off state, isolation and return loss is -22.45dB and - 0.8666dB, respectively. In order to improve the switch-on reflection loss to meet design specifications, two short high- impedance sections of transmission line have been calculated and added to the RF-MEMS switch. Then the reflection coefficient at switch-on state has been increased by 78.13% to -14.22dB which is less than -10dB while the insertion loss, isolation and return loss are all improved by 66.54%, 13.36% and 11.65%, respectively, with 65ohm high-impedance lines. The RF-MEMS switch’s actuation time of 27μs is obtained. A detail comparison among the proposed RF-MEMS switch and other state-of-the-art designs has been summarized in the end. IEEE 2018-01-01 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/52022/2/52022.pdf application/pdf en http://irep.iium.edu.my/52022/3/52022-A%20novel%20design%20of%20low-voltage%20low-loss%20K-Band%20RF-MEMS%20capacitive%20switch_SCOPUS.pdf Ma, Li-Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2018) A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch. In: Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP), 30th May-2nd June 2016, Budapest, Hungary. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7514827 10.1109/DTIP.2016.7514827 |
| spellingShingle | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch |
| title | A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch |
| title_full | A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch |
| title_fullStr | A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch |
| title_full_unstemmed | A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch |
| title_short | A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch |
| title_sort | novel design of low-voltage low-loss k-band rf-mems capacitive switch |
| topic | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/2/52022.pdf http://irep.iium.edu.my/52022/3/52022-A%20novel%20design%20of%20low-voltage%20low-loss%20K-Band%20RF-MEMS%20capacitive%20switch_SCOPUS.pdf |