Effect of single event upset on 6T and 12T 32NM CMOS SRAMs circuit

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Effect of single event upset on 6T and 12T 32NM CMOS SRAMs circuit

Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to store each bit. Over the years, technology scaling of complementary metaloxide semiconductor (CMOS) devices has also resulted in the scaling of SRAM using minimum-size transistors. As transistor si...

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Bibliographic Details
Main Authors:	Yusop, Nur Syafiqah, Mahmud, Manzar, Nordin, Anis Nurashikin, Hasbullah, Nurul Fadzlin
Format:	Proceeding Paper
Language:	English
Published:	Penerbit UMT, Universiti Malaysia Terengganu (UMT) 2016
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/51579/ http://irep.iium.edu.my/51579/1/51579_Effect%20of%20single%20event.pdf

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