Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator
CMOS integration in RF MEMS have become dominant due to the growing demand of mobile and wireless communication system. Usage of off chip resonators is not efficient since it leads to large area and high interfacing loss. Integration of CMOS with SAW resonators is a possible solution to reduce the l...
| Main Authors: | , |
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| Format: | Proceeding Paper |
| Language: | English |
| Published: |
2013
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| Online Access: | http://irep.iium.edu.my/46637/ http://irep.iium.edu.my/46637/1/46637.pdf |
| _version_ | 1848783002849509376 |
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| author | Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin |
| author_facet | Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin |
| author_sort | Md Ralib @ Md Raghib, Aliza 'Aini |
| building | IIUM Repository |
| collection | Online Access |
| description | CMOS integration in RF MEMS have become dominant due to the growing demand of mobile and wireless communication system. Usage of off chip resonators is not efficient since it leads to large area and high interfacing loss. Integration of CMOS with SAW resonators is a possible solution to reduce the loss. In this work, a SAW resonator was developed using AZO/Al/Si layers in 0.18 μm CMOS technology. AZO was chosen as the piezoelectric layer to achieve high electromechanical coupling coefficient for good SAW performance. This paper highlights the comparative analysis of two different piezoelectric materials: pure Zinc Oxide (ZnO) and Aluminium doped Zinc Oxide (AZO) for GHz CMOS MEMS SAW resonator. S parameter measurements were performed for the fabricated designs to get the resonance frequencies and the electromechanical coupling coefficients were recalculated. The design and finite element modeling simulation was conducted using COMSOLTM to verify the performance of the resonator using both Al-doped ZnO and pure ZnO via the simulation results. |
| first_indexed | 2025-11-14T16:14:26Z |
| format | Proceeding Paper |
| id | iium-46637 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T16:14:26Z |
| publishDate | 2013 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-466372016-04-15T09:34:00Z http://irep.iium.edu.my/46637/ Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices CMOS integration in RF MEMS have become dominant due to the growing demand of mobile and wireless communication system. Usage of off chip resonators is not efficient since it leads to large area and high interfacing loss. Integration of CMOS with SAW resonators is a possible solution to reduce the loss. In this work, a SAW resonator was developed using AZO/Al/Si layers in 0.18 μm CMOS technology. AZO was chosen as the piezoelectric layer to achieve high electromechanical coupling coefficient for good SAW performance. This paper highlights the comparative analysis of two different piezoelectric materials: pure Zinc Oxide (ZnO) and Aluminium doped Zinc Oxide (AZO) for GHz CMOS MEMS SAW resonator. S parameter measurements were performed for the fabricated designs to get the resonance frequencies and the electromechanical coupling coefficients were recalculated. The design and finite element modeling simulation was conducted using COMSOLTM to verify the performance of the resonator using both Al-doped ZnO and pure ZnO via the simulation results. 2013-04-16 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/46637/1/46637.pdf Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin (2013) Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator. In: 2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2013), 16th-18th Apr. 2013, Barcelona, Spain. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6559389 |
| spellingShingle | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator |
| title | Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator |
| title_full | Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator |
| title_fullStr | Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator |
| title_full_unstemmed | Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator |
| title_short | Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator |
| title_sort | comparative analysis of zinc oxide and aluminium doped zno for ghz cmos mems surface acoustic wave resonator |
| topic | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/46637/ http://irep.iium.edu.my/46637/ http://irep.iium.edu.my/46637/1/46637.pdf |