Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch
This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt- connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight be...
| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English |
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2014
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| Online Access: | http://irep.iium.edu.my/46632/ http://irep.iium.edu.my/46632/1/C_-_2014_-_Design_and_Optimization_of_a_Low-Votlage_Shunt_Capacitive_RF-MEMS_Switch.pdf |
| _version_ | 1848783001408765952 |
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| author | Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_facet | Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_sort | Ma, Li Ya |
| building | IIUM Repository |
| collection | Online Access |
| description | This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt- connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight beams provide the bias voltage. The switch is designed in 0.35μm complementary metal oxide semiconductor (CMOS) process and is electrostatically actuated by a low pull-in voltage of 2.9V. Taguchi Method is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant and a robust design. The pull-in voltage, vertical displacement, and maximum von Mises stress distribution was simulated using finite element modeling (FEM) simulation – IntelliSuite v8.7® software. With Pareto ANOVA technique, the percentage contribution of each geometric parameter to the spring constant and stress distribution was calculated; and then the optimized parameters were got as t=0.877μm, w=4μm, L1=40μm, L2=50μm and L3=70μm. RF performance of the switch was simulated by AWR Design Environment 10® and yielded isolation and insertion loss of -23dB and -9.2dB respectively at 55GHz. |
| first_indexed | 2025-11-14T16:14:24Z |
| format | Proceeding Paper |
| id | iium-46632 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T16:14:24Z |
| publishDate | 2014 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-466322018-06-20T01:14:35Z http://irep.iium.edu.my/46632/ Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt- connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight beams provide the bias voltage. The switch is designed in 0.35μm complementary metal oxide semiconductor (CMOS) process and is electrostatically actuated by a low pull-in voltage of 2.9V. Taguchi Method is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant and a robust design. The pull-in voltage, vertical displacement, and maximum von Mises stress distribution was simulated using finite element modeling (FEM) simulation – IntelliSuite v8.7® software. With Pareto ANOVA technique, the percentage contribution of each geometric parameter to the spring constant and stress distribution was calculated; and then the optimized parameters were got as t=0.877μm, w=4μm, L1=40μm, L2=50μm and L3=70μm. RF performance of the switch was simulated by AWR Design Environment 10® and yielded isolation and insertion loss of -23dB and -9.2dB respectively at 55GHz. 2014-04 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/46632/1/C_-_2014_-_Design_and_Optimization_of_a_Low-Votlage_Shunt_Capacitive_RF-MEMS_Switch.pdf Ma, Li Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2014) Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch. In: Source of the Document DTIP 2014 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 7056641, 1-4 April 2014, Cannes, France. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7056645&tag=1 |
| spellingShingle | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch |
| title | Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch |
| title_full | Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch |
| title_fullStr | Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch |
| title_full_unstemmed | Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch |
| title_short | Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch |
| title_sort | design and optimization of allow-voltage shunt capacitive rf-mems switch |
| topic | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/46632/ http://irep.iium.edu.my/46632/ http://irep.iium.edu.my/46632/1/C_-_2014_-_Design_and_Optimization_of_a_Low-Votlage_Shunt_Capacitive_RF-MEMS_Switch.pdf |