Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

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Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×1016 neutron/cm2. Based on the current-voltag...

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Bibliographic Details
Main Authors:	Ahmad Fauzi, Dhiyauddin, Alang Md Rashid, Nahrul Khair, ., Md. Rashid, Che Omar, Nuurul Iffah, Hasbullah, Nurul Fadzlin, Mohamed Zin, muhammad Rawi
Format:	Proceeding Paper
Language:	English
Published:	2013
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/1/46587.pdf

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