High frequency CNTFET-based logic gate
Modeling of high frequency carbon nanotube field effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model t...
| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/44632/ http://irep.iium.edu.my/44632/1/RSM2015.pdf |
| _version_ | 1848782637841252352 |
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| author | Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz |
| author_facet | Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz |
| author_sort | Farhana, Soheli |
| building | IIUM Repository |
| collection | Online Access |
| description | Modeling of high frequency carbon nanotube field effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension
of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model the logic gates and verify their transfer characteristics. The logic gates discussed in this paper are inverters, NOR gate and NAND gate. The high frequency response is achieved from the proposed logic gates operation analyzed from the small signal model. Finally the results show the electronic properties of carbon nanotubes (CNTs) affect the variations for the logic gate’s transfer characteristics. |
| first_indexed | 2025-11-14T16:08:38Z |
| format | Proceeding Paper |
| id | iium-44632 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T16:08:38Z |
| publishDate | 2015 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-446322016-05-23T02:46:39Z http://irep.iium.edu.my/44632/ High frequency CNTFET-based logic gate Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz TK Electrical engineering. Electronics Nuclear engineering Modeling of high frequency carbon nanotube field effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model the logic gates and verify their transfer characteristics. The logic gates discussed in this paper are inverters, NOR gate and NAND gate. The high frequency response is achieved from the proposed logic gates operation analyzed from the small signal model. Finally the results show the electronic properties of carbon nanotubes (CNTs) affect the variations for the logic gate’s transfer characteristics. 2015-08 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/44632/1/RSM2015.pdf Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2015) High frequency CNTFET-based logic gate. In: 10th IEEE 2015 Regional Symposium on Micro and Nanoelectronics (RSM 2015), 19-21 August 2015, Kuala Terengganu. http://ieeemalaysia-eds.org/rsm2015/ |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz High frequency CNTFET-based logic gate |
| title | High frequency CNTFET-based logic gate |
| title_full | High frequency CNTFET-based logic gate |
| title_fullStr | High frequency CNTFET-based logic gate |
| title_full_unstemmed | High frequency CNTFET-based logic gate |
| title_short | High frequency CNTFET-based logic gate |
| title_sort | high frequency cntfet-based logic gate |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/44632/ http://irep.iium.edu.my/44632/ http://irep.iium.edu.my/44632/1/RSM2015.pdf |