DIBL and subthreshold swing effect on carbon nanotube field effect transistor

DIBL and subthreshold swing effect on carbon nanotube field effect transistor

Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel...

Full description

Bibliographic Details
Main Authors: Farhana, Soheli, Alam, A. H. M. Zahirul, Khan, Sheroz
Format: Proceeding Paper
Language:English
English
Published: 2015
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/44492/
http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf
http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf

Similar Items

Similar Items